Organizer and Regional Partners

Joanneum Research
Steirmark
Graz
Sponsors

IEEE

IEEE
SSCS
EDS

Platinum Patron

AMS AG
Infineon
NXP
Graz Technical University

Silver Patrons

AVL
Cadence
Chipdesign
Dialog logo
ECSEL EU logo
Gts logo
Intel logo
Toshiba logo

Bronze Patrons

ECSEL AUSTRIA logo
EVG group
MCL
IV Steiermark

Partner

Graz Tourism

REGISTRATION

Online-Registration is closed now.  Please register on-site at the registration desk at the conference venue Messe Congress Graz.
 

Registration time

Monday 09:00 – 19:00

Tuesday 08:00 – 19:00

Wednesday 08:00 – 19:30

Thursday 08:00 – 18:30

 

Additonal On-Site Registration for Friday (Workshop Day) - Graz Technical University

Friday 08:00 – 18:00

 

General purpose of the conferences

The aim of ESSDERC and ESSCIRC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits. The increasing level of integration for system-on-chip design made available by advances in silicon technology is, more than ever before, calling for a deeper interaction among technologists, device experts, IC designers, and system designers. While keeping separate Technical Program Committees, ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both communities. Attendees registered for either conference are encouraged to attend any of the scheduled parallel sessions, regardless to which conference they belong.

 

ESSDERC 2015 main topics

CMOS Processes, Devices and Integration

CMOS scaling, Novel MOS device architectures; Circuit/device interaction and co-optimization; High-mobility channel devices; CMOS front-end or back-end processes; Interconnects; Integration of RF or photonic devices; 3D integration.

 

Opto-, Power- and Microwave Devices

New device or process architectures; New phenomena and performance improvement of optoelectronic, high voltage, smart power, IGBT, microwave devices; Passive devices, antennas and filters (including Si, Ge, SiC, GaN); Optoelectronic devices including sensors, LEDs, semiconductor lasers; Photovoltaic devices; Studies of high temperature operation; IC cooling and packaging aspects.

 

Modeling & Simulation

Numerical, analytical and statistical modeling and simulation of electronic, optical or hybrid devices, the interconnect, isolation and 2D or 3D integration; Aspects of materials, fabrication processes and devices e.g. advanced physical phenomena (quantum mechanical and non-stationary transport phenomena, ballistic transport, …); Compact circuit modeling; Mechanical or electro-thermal modeling and simulation; DfM.

 

Characterization, Reliability & Yield

Front-end and back-end manufacturing processes; 3D integration and wafer-level packaging; Reliability of materials, processes and devices; Advanced interconnects; ESD, latch-up, soft errors, noise and mismatch behavior, hot carrier effects, bias temperature instabilities, and EMI; Defect monitoring and control; Metrology; Test structures and methodologies; Manufacturing yield modeling, analysis and testing.

 

Advanced & Emerging Memories

Novel memory cell concepts and architectures; Embedded and stand-alone memories; DRAM, FeRAM, MRAM, PCRAM, CBRAM, Flash, SONOS, nanocrystal memories; single and few electron memories; 3D systems integration; Organic memories; NEMS-based devices.

 

MEMS, Sensors & Display Technologies

Design, fabrication, modeling, reliability, packaging and smart systems integration of actuators (discrete SoC, SiP, or heterogenous 3D integration); MEMS, NEMS, optical, chemical or biological sensors; Display technologies; High-speed imagers; TFTs; Organic and flexible substrate electronics.

 

Emerging Non-CMOS Devices & Technologies

Novel non-CMOS materials, processes and devices, (nanotubes, nanowires and nanoparticles, including carbon, graphene, metal oxides, …) for electronic, optoelectronic, sensor & actuator applications; Molecular and quantum devices; Nanophotonics, plasmonics, spintronics, self-assembling methods; Energy harvesters; High frequency digital and analog devices including THz; New high-mobility channels (strained Si, Ge, SiGe).

 

CONTACT
Local Scientific Secretariat
JOANNEUM RESEARCH
Forschungsgesellschaft mbH
Leonhardstrasse 59, 8010 Graz, Austria
Phone: +43 316 876 11 90
Mail: essxxrc2015@joanneum.at
Web: www.esscirc-essderc2015.org
 

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