Organizer and Regional Partners
A Tutorial Day will be organized on Monday, 14 September, 2015.
The tutorials will take place at the Messe Graz.
ESSDERC Tutorial (Full Day)
GaN Based Power Electronics
Time: 11:00 to 18:00
Organizer: Oliver Häberlen, Infineon Technologies, Austria
This tutorial aims at providing a broad overview on the merits and challenges of GaN based power electronics. Increasingly efficient systems to produce, distribute and use energy will be necessary to cover worldwide growing energy needs. Good news is that about a third of the global energy use is based on electricity, where power electronics will enable further significant reduction in power losses. Silicon power technology has developed tremendously over the past decades and will continue to improve. However, for highest performance levels new semiconductor materials like gallium nitride offer record figure-of-merit values compared to state-of-the-art silicon technology.
The tutorial will start with an introductive talk on a very wide-spread power electronics system, the switched mode power supply. It will show the system perspective and explain the key levers to improve the power conversion efficiency including the requirements and challenges for the power devices. It will be shown how GaN power devices enable new topologies that could not be addressed with silicon devices. The next talk will give an overview on GaN technology and device design including the basic operation principle of a GaN HEMT (2DEG and hetero structure, basic device function, HEMT, lateral device, design, normally-on vs. normally-off). The third talk will focus on the challenges of the hetero-epitaxial growth of GaN on silicon wafers to avoid the prohibitive cost of GaN bulk substrates. Finally, since the missing full proof of reliability has hindered the new material system from entering the market the past few years, the fourth talk will give an overview over the material and device specific failure types and degradation modes.
11:00 – 12:30 Switched Mode Power Supplies: System Solutions and Challenges for Power Devices
Gerald Deboy, Infineon Technologies Austria AG, Villach (Austria)
12:30 – 13:30 Lunch
13:30 – 15:00 GaN Power Switching Transistors: Survey on Device Concepts and Technology
Joachim Würfl, Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin (Germany)
15:00 – 15:30 Coffee Break
15:30 – 16:30 The Material Challenge: Hetero-epitaxial Growth of GaN on Silicon Wafers
Marianne Germain, EpiGaN, Hasselt (Belgium)
16:30 – 18:00 Dispersion effects, failure modes and mechanisms of GaN-on-Si HEMTs for power electronics applications
Enrico Zanoni, University of Padova, Padova (Italy)
Abstracts and CVs: click here
ESSDERC Tutorial (Half Day)
Novel Transistors – Beyond the Planar Silicon MOSFET
Organizer: Max Lemme, University of Siegen, Germany
Time: 13:30 to 18:00
The aim of this tutorial is to present - in a didactic format - novel and emerging transistor options for More Moore and More Than Moore applications. Even though industry is approaching the end of physical gate length scaling, the quest for new transistor designs and materials is far from over. In fact, the options for future transistors appear to be as wide as or wider than they have ever been. The speakers of this tutorial have been carefully chosen to reflect the multitude of approaches pursued in research and development today. The target audience is PhD students with various backgrounds and industry engineers, but also aims to peak the interest researchers working in related fields. The presentations will provide a thorough introduction to the respective topics and aim to give an outlook on circuit design implications. The latter is intended to also address attendants of the sister conference, the European Solid-State Circuits Conference (ESSCIRC.
13:00 – 14:00 Thin Channel Silicon Transistors
Geert Eneman, IMEC, Leuven (Belgium)
14:00 – 14:30 Coffee Break
14:30 – 15:30 Tunnel FETs
Joachim Knoch, RWTH-Aachen, Aachen (Germany)
15:30 – 16:30 Compound Semiconductor Devices
Suman Datta, Penn State, State College (USA)
16:30 – 17:00 Coffee Break
17:00 – 18:00 2D Channel Devices
Jörg Appenzeller, Purdue, West Lafayette (USA)
18:00 – 18:30 Graphene FET Models for Circuit Design
Sebastien Fregonese, Univ. Bordeaux, Bordeaux (France)
Detailed Program: click here